Feature: substrate-induced band gap of graphene on h-BN (Giovannetti 2007) — SOF-8064

other/materials_designer/specific_examples/Introduction.ipynb

@@ -24,7 +24,7 @@
     "| `P-0D-NRB`   | Nanoribbon                     | *To be added*                                                                                                        | —             | — |\n",
     "| `C-2D-HST`   | Heterostack                    | [Si/SiO₂/HfO₂/TiN Heterostructure](heterostructure_silicon_silicon_dioxide_hafnium_dioxide_titanium_nitride.ipynb)   | *To be added* | [[3]](#ref3) |\n",
     "| `C-2D-INT-S` | Interface Simple               | *To be added*                                                                                                        | —             | — |\n",
-    "| `C-2D-INT-Z` | Interface ZSL                  | [BN/Graphene 2D–2D Interface](interface_2d_2d_boron_nitride_graphene.ipynb)                                          | *To be added* | [[4]](#ref4) |\n",
+    "| `C-2D-INT-Z` | Interface ZSL                  | [BN/Graphene 2D–2D Interface](interface_2d_2d_boron_nitride_graphene.ipynb)                                          | [Gr/h-BN Stacking Energy and Band Gap](interface_2d_2d_boron_nitride_graphene_SIMULATION.ipynb) | [[4]](#ref4) |\n",
     "| `C-2D-INT-Z` | Interface ZSL                  | [Graphene/SiO₂ 2D–3D Interface](interface_2d_3d_graphene_silicon_dioxide.ipynb)                                      | *To be added* | [[5]](#ref5) |\n",
     "| `C-2D-INT-Z` | Interface ZSL                  | [Cu/Cristobalite 3D–3D Interface](interface_3d_3d_copper_cristobalite.ipynb)                                         | *To be added* | [[6]](#ref6) |\n",
     "| `C-2D-INT-Z` | Interface ZSL                  | [Graphene/Ni Interface Film XY Position Optimization](optimization_interface_film_xy_position_graphene_nickel.ipynb) | [Gr/Ni(111) Registry and Work of Adhesion](optimization_interface_film_xy_position_graphene_nickel_SIMULATION.ipynb) | [[7]](#ref7) |\n",